BC847CE6433HTMA1 Tech Specifications

BC847CE6433HTMA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 330mW
Terminal Form GULL WING
Current Rating 100mA
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SINGLE
Transistor Application SWITCHING
Transistor Type NPN
Max Collector Current 100mA
Current - Collector Cutoff (Max) 15nA ICBO
Collector Emitter Breakdown Voltage 45V
Max Breakdown Voltage 45V
Emitter Base Voltage (VEBO) 6V
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature 150°C TJ
Published 2011
Part Status Not For New Designs
Number of Terminations 3
Voltage - Rated DC 45V
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 250MHz
Base Part Number BC847
Number of Elements 1
Power Dissipation 330mW
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 600mV
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA 5V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Transition Frequency 250MHz
Collector Base Voltage (VCBO) 50V
RoHS Status ROHS3 Compliant
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