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BC850BWH6327XTSA1 Tech Specifications

BC850BWH6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature 150°C TJ
Published 2008
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position DUAL
Frequency 250MHz
Number of Elements 1
Power Dissipation 250mW
Halogen Free Halogen Free
Transistor Type NPN
Max Collector Current 100mA
Current - Collector Cutoff (Max) 15nA ICBO
Collector Emitter Breakdown Voltage 45V
Transition Frequency 250MHz
Collector Base Voltage (VCBO) 50V
Height 800μm
Width 1.25mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case SC-70, SOT-323
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Part Status Not For New Designs
Number of Terminations 3
Max Power Dissipation 250mW
Terminal Form GULL WING
Base Part Number BC850
Element Configuration Single
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 45V
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Current - Collector (Ic) (Max) 100mA
Collector Emitter Saturation Voltage 600mV
Emitter Base Voltage (VEBO) 6V
Length 2mm
Radiation Hardening No
Lead Free Lead Free
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BC850BWH6327XTSA1 Documents

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