BC857BWH6327XTSA1 Tech Specifications

BC857BWH6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Surface Mount
Package / Case SC-70, SOT-323
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 250mW
Terminal Form GULL WING
Frequency 250MHz
Base Part Number BC857
Element Configuration Single
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 650mV
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA 5V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Current - Collector (Ic) (Max) 100mA
Collector Emitter Saturation Voltage 650mV
Emitter Base Voltage (VEBO) 5V
Length 2mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature 150°C TJ
Published 2011
Part Status Not For New Designs
Number of Terminations 3
Additional Feature LOW NOISE
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation 250mW
Halogen Free Halogen Free
Transistor Type PNP
Max Collector Current 100mA
Current - Collector Cutoff (Max) 15nA ICBO
Collector Emitter Breakdown Voltage 45V
Transition Frequency 250MHz
Collector Base Voltage (VCBO) 50V
Height 800μm
Width 1.25mm
Lead Free Lead Free
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BC857BWH6327XTSA1 Documents

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