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BCP49H6327XTSA1 Tech Specifications

BCP49H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 26 Weeks
Mount Surface Mount
Package / Case TO-261-4, TO-261AA
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Part Status Discontinued
Number of Terminations 4
Max Power Dissipation 1.5W
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Collector Emitter Voltage (VCEO) 60V
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA 5V
Vce Saturation (Max) @ Ib, Ic 1V @ 100μA, 100mA
Transition Frequency 200MHz
Collector Base Voltage (VCBO) 80V
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 4
Operating Temperature 150°C TJ
Published 2007
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Base Part Number BCP49
Polarity NPN
Power - Max 1.5W
Transistor Type NPN - Darlington
Max Collector Current 500mA
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 60V
Frequency - Transition 200MHz
hFE Min 2000
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BCP49H6327XTSA1 Documents

Download datasheets and manufacturer documentation for BCP49H6327XTSA1

  • Datasheets

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BCP49E6327HTSA1 International Rectifier (Infineon Technologies) Transistors - Bipolar (BJT) - Single 2603
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BCP49H6327XTSA1 International Rectifier (Infineon Technologies) Transistors - Bipolar (BJT) - Single 2571

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