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BCP5610E6327HTSA1 Tech Specifications

BCP5610E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-261-4, TO-261AA
Operating Temperature 150°C TJ
Published 2011
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 2W
Base Part Number BCP56
Power Dissipation 2W
Collector Emitter Voltage (VCEO) 500mV
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA 2V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Current - Collector (Ic) (Max) 1A
Emitter Base Voltage (VEBO) 5V
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 4
Packaging Tape & Reel (TR)
Part Status Obsolete
ECCN Code EAR99
Frequency 100MHz
Number of Elements 1
Transistor Type NPN
Max Collector Current 1A
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 80V
Collector Base Voltage (VCBO) 100V
Radiation Hardening No
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BCP5610E6327HTSA1 Documents

Download datasheets and manufacturer documentation for BCP5610E6327HTSA1

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