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BCR198SH6327XTSA1 Tech Specifications

TRANS 2PNP PREBIAS 0.25W SOT363

Product Attribute Attribute Value
Category Discrete Semiconductors / BJT Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 26 Weeks
Mounting Type Surface Mount
Number of Pins 6
Published 2009
Part Status Not For New Designs
Number of Terminations 6
Terminal Finish Tin (Sn)
Min Operating Temperature -65°C
Max Power Dissipation 250mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reference Standard AEC-Q101
Polarity PNP
Transistor Application SWITCHING
Transistor Type 2 PNP - Pre-Biased (Dual)
Max Collector Current 100mA
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Transition Frequency 190MHz
Frequency - Transition 190MHz
Resistor - Base (R1) 47k Ω
Height 800μm
Width 1.25mm
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Packaging Tape & Reel (TR)
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Element Configuration Dual
Halogen Free Halogen Free
Collector Emitter Voltage (VCEO) 300mV
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA 5V
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 300mV
hFE Min 70
Resistor - Emitter Base (R2) 47k Ω
Length 2mm
RoHS Status ROHS3 Compliant
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BCR198SH6327XTSA1 Documents

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