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BCR35PNH6433XTMA1 Tech Specifications

TRANS NPN/PNP PREBIAS SOT363

Product Attribute Attribute Value
Category Discrete Semiconductors / BJT Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 26 Weeks
Mounting Type Surface Mount
Number of Pins 6
Published 2011
Part Status Not For New Designs
Number of Terminations 6
Max Operating Temperature 150°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 4.7
Terminal Form GULL WING
Reference Standard AEC-Q101
Polarity NPN, PNP
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA 5V
Collector Emitter Breakdown Voltage 50V
Frequency - Transition 150MHz
Resistor - Emitter Base (R2) 47k Ω
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Packaging Tape & Reel (TR)
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Min Operating Temperature -65°C
Max Power Dissipation 250mW
Base Part Number BCR35PN
Number of Elements 2
Element Configuration Dual
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Max Collector Current 100mA
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Transition Frequency 150MHz
Resistor - Base (R1) 10k Ω
Radiation Hardening No
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