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BCV26E6327HTSA1 Tech Specifications

BCV26E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 26 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature 150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC -30V
Terminal Position DUAL
Current Rating -500mA
Number of Elements 1
Element Configuration Single
Halogen Free Not Halogen Free
Collector Emitter Voltage (VCEO) 1V
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA 5V
Vce Saturation (Max) @ Ib, Ic 1V @ 100μA, 100mA
Transition Frequency 200MHz
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 40V
hFE Min 4000
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 3
Terminal Finish Tin (Sn)
Max Power Dissipation 360mW
Terminal Form GULL WING
Base Part Number BCV26
Polarity PNP
Power - Max 360mW
Transistor Type PNP - Darlington
Max Collector Current 500mA
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 30V
Collector Emitter Saturation Voltage 1V
Frequency - Transition 200MHz
Emitter Base Voltage (VEBO) 10V
Radiation Hardening No
Lead Free Lead Free
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BCV26E6327HTSA1 Documents

Download datasheets and manufacturer documentation for BCV26E6327HTSA1

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