BCV28H6327XTSA1 Tech Specifications

BCV28H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mount Surface Mount
Package / Case TO-243AA
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 1W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Power - Max 1W
Transistor Type PNP - Darlington
Max Collector Current 500mA
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 30V
Collector Emitter Saturation Voltage 1V
Collector Base Voltage (VCBO) 40V
hFE Min 4000
Length 4.5mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature 150°C TJ
Published 2011
Part Status Not For New Designs
Number of Terminations 3
Terminal Form FLAT
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Polarity PNP
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Collector Emitter Voltage (VCEO) 1V
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA 5V
Vce Saturation (Max) @ Ib, Ic 1V @ 100μA, 100mA
Transition Frequency 200MHz
Frequency - Transition 200MHz
Emitter Base Voltage (VEBO) 10V
Height 1.5mm
Width 2.5mm
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