BCV29H6327XTSA1 Tech Specifications

BCV29H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 26 Weeks
Mount Surface Mount
Package / Case TO-243AA
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Form FLAT
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Polarity NPN
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
Max Collector Current 500mA
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 30V
Frequency - Transition 150MHz
hFE Min 4000
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature 150°C TJ
Published 2011
Part Status Not For New Designs
Number of Terminations 3
Max Power Dissipation 1W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Power - Max 1W
Halogen Free Halogen Free
Collector Emitter Voltage (VCEO) 30V
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA 5V
Vce Saturation (Max) @ Ib, Ic 1V @ 100μA, 100mA
Transition Frequency 150MHz
Collector Base Voltage (VCBO) 40V
RoHS Status ROHS3 Compliant
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BCV29H6327XTSA1 Documents

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