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BCV62BE6433HTMA1 Tech Specifications

TRANS 2PNP 30V 0.1A SOT143

Product Attribute Attribute Value
Category Discrete Semiconductors / Arrays BJT Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Surface Mount
Package / Case TO-253-4, TO-253AA
Operating Temperature 150°C TJ
Published 2001
Part Status Last Time Buy
Number of Terminations 4
Voltage - Rated DC -30V
Terminal Form GULL WING
Base Part Number BCV62
JESD-30 Code R-PDSO-G4
Configuration CURRENT MIRROR
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 650mV
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA 5V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Transition Frequency 250MHz
Collector Base Voltage (VCBO) 30V
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 300mW
Current Rating -100mA
Reference Standard AEC-Q101
Number of Elements 2
Power - Max 300mW
Transistor Type 2 PNP (Dual)
Max Collector Current 100mA
Current - Collector Cutoff (Max) 15nA ICBO
Collector Emitter Breakdown Voltage 30V
Frequency - Transition 250MHz
RoHS Status ROHS3 Compliant
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