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BCV62CE6327HTSA1 Tech Specifications

Trans GP BJT PNP 30V 0.1A Automotive 4-Pin(3+Tab) SOT-143 T/R

Product Attribute Attribute Value
Category Discrete Semiconductors / Arrays BJT Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Surface Mount
Package / Case TO-253-4, TO-253AA
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 300mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 250MHz
Base Part Number BCV62
Number of Elements 2
Element Configuration Dual
Halogen Free Not Halogen Free
Collector Emitter Voltage (VCEO) 650mV
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA 5V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Transition Frequency 250MHz
Max Breakdown Voltage 30V
Emitter Base Voltage (VEBO) 6V
Height 1mm
Width 2.9mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 4
Operating Temperature 150°C TJ
Published 2001
Part Status Last Time Buy
Number of Terminations 4
Voltage - Rated DC -30V
Terminal Form GULL WING
Current Rating -100mA
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
Polarity PNP
Power Dissipation 300mW
Transistor Type 2 PNP (Dual)
Max Collector Current 100mA
Current - Collector Cutoff (Max) 15nA ICBO
Collector Emitter Breakdown Voltage 30V
Collector Emitter Saturation Voltage 650mV
Collector Base Voltage (VCBO) 30V
hFE Min 125
Length 2.9mm
REACH SVHC No SVHC
Lead Free Lead Free
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