BCW66KGE6327HTSA1 Tech Specifications

BCW66KGE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature 150°C TJ
Published 2007
Part Status Not For New Designs
Number of Terminations 3
Max Power Dissipation 500mW
Terminal Form GULL WING
Base Part Number BCW66
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 170MHz
Transistor Type NPN
Max Collector Current 800mA
Current - Collector Cutoff (Max) 20nA ICBO
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 450mV
Collector Base Voltage (VCBO) 75V
Height 900μm
Width 1.3mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position DUAL
Frequency 170MHz
Number of Elements 1
Power Dissipation 500mW
Halogen Free Not Halogen Free
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 450mV
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 1V
Vce Saturation (Max) @ Ib, Ic 450mV @ 50mA, 500mA
Transition Frequency 170MHz
Max Breakdown Voltage 45V
Emitter Base Voltage (VEBO) 5V
Length 2.9mm
Radiation Hardening No
Lead Free Lead Free
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