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BCW68GE6327HTSA1 Tech Specifications

BCW68GE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 3
Voltage - Rated DC -45V
Terminal Position DUAL
Current Rating -800mA
Base Part Number BCW68
Element Configuration Single
Halogen Free Not Halogen Free
Transistor Type PNP
Max Collector Current 800mA
Current - Collector Cutoff (Max) 20nA ICBO
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 700mV
Collector Base Voltage (VCBO) 45V
Height 900μm
Width 1.3mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature 150°C TJ
Published 2007
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 330mW
Terminal Form GULL WING
Frequency 200MHz
Number of Elements 1
Power Dissipation 330mW
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 700mV
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 1V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Transition Frequency 200MHz
Max Breakdown Voltage 45V
Emitter Base Voltage (VEBO) 2V
Length 2.9mm
Radiation Hardening No
Lead Free Lead Free
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