BDP947H6327XTSA1 Tech Specifications

BDP947H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 6 Weeks
Mount Surface Mount
Package / Case TO-261-4, TO-261AA
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Part Status Discontinued
Number of Terminations 4
Max Power Dissipation 5W
Terminal Form GULL WING
Base Part Number BDP947
Configuration SINGLE
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Transistor Type NPN
Max Collector Current 3A
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 45V
Max Breakdown Voltage 45V
Emitter Base Voltage (VEBO) 5V
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 4
Operating Temperature 150°C TJ
Published 2011
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position DUAL
Frequency 100MHz
Number of Elements 1
Power Dissipation 3W
Power - Max 5W
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 500mV
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 1V
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 45V
Radiation Hardening No
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BDP947H6327XTSA1 Documents

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