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BF998E6327HTSA1 Tech Specifications

BF998E6327HTSA1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / RF MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Surface Mount
Number of Pins 4
Published 2001
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Min Operating Temperature -55°C
Max Power Dissipation 200mW
Terminal Form GULL WING
Frequency 45MHz
Pin Count 4
Configuration SINGLE
Operating Mode DUAL GATE, DEPLETION MODE
Current - Test 10mA
Transistor Type N-Channel
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 0.03A
FET Technology METAL-OXIDE SEMICONDUCTOR
Height 1mm
Width 1.3mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Package / Case TO-253-4, TO-253AA
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 4
Max Operating Temperature 150°C
Voltage - Rated DC 12V
Terminal Position DUAL
Current Rating 30mA
Base Part Number BF998
Number of Elements 1
Number of Channels 1
Case Connection SOURCE
Halogen Free Not Halogen Free
Continuous Drain Current (ID) 30mA
Gain 28dB
Input Capacitance 1.2pF
Noise Figure 2.8dB
Length 2.9mm
Radiation Hardening No
Lead Free Lead Free
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