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BFP 740FESD E6327 Tech Specifications

RF TRANS NPN 4.7V 47GHZ 4TSFP

Product Attribute Attribute Value
Category Discrete Semiconductors / RF BJT Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature 150°C TJ
Published 2010
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Reach Compliance Code compliant
JESD-30 Code R-PDSO-F4
Configuration SINGLE
Transistor Application AMPLIFIER
Transistor Type NPN
Gain 9dB ~ 31dB
Current - Collector (Ic) (Max) 45mA
Frequency - Transition 47GHz
Noise Figure (dB Typ @ f) 0.5dB ~ 1.45dB @ 150MHz ~ 10GHz
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case 4-SMD, Flat Leads
Transistor Element Material SILICON GERMANIUM CARBON
Packaging Tape & Reel (TR)
Part Status Obsolete
Number of Terminations 4
Terminal Position DUAL
Base Part Number BFP740
Number of Elements 1
Power - Max 160mW
Polarity/Channel Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 25mA 3V
Voltage - Collector Emitter Breakdown (Max) 4.7V
Transition Frequency 47000MHz
Highest Frequency Band X B
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BFP 740FESD E6327 Documents

Download datasheets and manufacturer documentation for BFP 740FESD E6327

  • Datasheets

Others include   "BFP 7"   parts

The following parts include  'BFP 7' 

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BFP 720FESD E6327 Infineon Technologies RF BJT Transistors
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BFP 740F E6327 Infineon Technologies RF BJT Transistors
BFP 740FESD E6327 International Rectifier (Infineon Technologies) Transistors - Bipolar (BJT) - RF 2521

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