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BFP183WH6327XTSA1 Tech Specifications

TRANS RF NPN 12V SOT343

Product Attribute Attribute Value
Category Discrete Semiconductors / RF BJT Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Surface Mount
Package / Case SC-82A, SOT-343
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position DUAL
Frequency 8GHz
Number of Elements 1
Power Dissipation 450mW
Halogen Free Halogen Free
Transistor Type NPN
Max Collector Current 65mA
Collector Emitter Breakdown Voltage 12V
Transition Frequency 8000MHz
Frequency - Transition 8.5GHz
Emitter Base Voltage (VEBO) 2V
Height 900μm
Width 1.25mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 4
Operating Temperature 150°C TJ
Published 2014
Part Status Active
Number of Terminations 4
Max Power Dissipation 450mW
Terminal Form GULL WING
Base Part Number BFP183
Element Configuration Single
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 12V
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 15mA 8V
Gain 22dB
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 20V
Noise Figure (dB Typ @ f) 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Length 2mm
Radiation Hardening No
Lead Free Lead Free
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