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BFP520H6327XTSA1 Tech Specifications

RF Bipolar Transistors RF BIP TRANSISTOR

Product Attribute Attribute Value
Category Discrete Semiconductors / RF BJT Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Surface Mount
Package / Case SC-82A, SOT-343
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 4
Subcategory Other Transistors
Terminal Position DUAL
Frequency 45GHz
Pin Count 4
Element Configuration Single
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 2.5V
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 20mA 2V
Gain 22.5dB
Max Breakdown Voltage 3.5V
Emitter Base Voltage (VEBO) 1V
Height 900μm
Width 1.25mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 4
Operating Temperature 150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 100mW
Terminal Form GULL WING
Base Part Number BFP520
Number of Elements 1
Power Dissipation 100mW
Halogen Free Halogen Free
Transistor Type NPN
Max Collector Current 40mA
Collector Emitter Breakdown Voltage 3.5V
Transition Frequency 45000MHz
Collector Base Voltage (VCBO) 10V
Noise Figure (dB Typ @ f) 0.95dB @ 1.8GHz
Length 2mm
Radiation Hardening No
Lead Free Lead Free
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BFP520H6327XTSA1 Documents

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