BFP620H7764XTSA1 Tech Specifications

TRANS RF NPN 2.3V 80MA SOT343

Product Attribute Attribute Value
Category Discrete Semiconductors / RF BJT Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Surface Mount
Package / Case SC-82A, SOT-343
Transistor Element Material SILICON GERMANIUM CARBON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Power Rating 1W
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation 185mW
Halogen Free Halogen Free
Transistor Type NPN
Max Collector Current 80mA
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 50mA 1.5V
Gain 21.5dB
Hold Current 100mA
Collector Base Voltage (VCBO) 7.5V
Collector-Base Capacitance-Max 0.2pF
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 4
Operating Temperature 150°C TJ
Published 2005
Part Status Active
Number of Terminations 4
Additional Feature LOW NOISE
Max Power Dissipation 185mW
Terminal Form GULL WING
Frequency 65GHz
Base Part Number BFP620
Configuration SINGLE
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 2.3V
Max Repetitive Reverse Voltage (Vrrm) 15V
Collector Emitter Breakdown Voltage 2.8V
Transition Frequency 65000MHz
Max Breakdown Voltage 2.8V
Emitter Base Voltage (VEBO) 1.2V
Noise Figure (dB Typ @ f) 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Lead Free Lead Free
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