BFR 193W E6327 Tech Specifications

RF TRANS NPN 12V 8GHZ SOT323-3

Product Attribute Attribute Value
Category Discrete Semiconductors / RF BJT Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature 150°C TJ
Published 2011
Part Status Obsolete
Number of Terminations 3
Terminal Finish MATTE TIN
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
JESD-30 Code R-PDSO-G3
Number of Elements 1
Power - Max 580mW
Polarity/Channel Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 30mA 8V
Voltage - Collector Emitter Breakdown (Max) 12V
Transition Frequency 8000MHz
Power Dissipation-Max (Abs) 0.58W
Collector-Base Capacitance-Max 1pF
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case SC-70, SOT-323
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Terminal Form GULL WING
Reach Compliance Code compliant
Base Part Number BFR193
Qualification Status Not Qualified
Configuration SINGLE
Transistor Application AMPLIFIER
Transistor Type NPN
Gain 10.5dB ~ 16dB
Current - Collector (Ic) (Max) 80mA
Frequency - Transition 8GHz
Highest Frequency Band ULTRA HIGH FREQUENCY B
Noise Figure (dB Typ @ f) 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
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BFR 193W E6327 Documents

Download datasheets and manufacturer documentation for BFR 193W E6327

  • Datasheets

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The following parts include  'BFR 1' 

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BFR 106 E6327 International Rectifier (Infineon Technologies) Transistors - Bipolar (BJT) - RF 2657
BFR 181 E6327 International Rectifier (Infineon Technologies) Transistors - Bipolar (BJT) - RF 2754
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