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BFR181WH6327XTSA1 Tech Specifications

Trans GP BJT NPN 12V 0.02A 3-Pin SOT-323 T/R

Product Attribute Attribute Value
Category Discrete Semiconductors / RF BJT Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature 150°C TJ
Published 2014
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 175mW
Terminal Form GULL WING
Base Part Number BFR181
Configuration SINGLE
Power Dissipation 175mW
Halogen Free Halogen Free
Transistor Type NPN
Max Collector Current 20mA
Collector Emitter Breakdown Voltage 12V
Transition Frequency 8000MHz
Collector Base Voltage (VCBO) 20V
hFE Min 50
Noise Figure (dB Typ @ f) 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case SC-70, SOT-323
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Terminal Finish Tin (Sn)
Terminal Position DUAL
Frequency 8GHz
Number of Elements 1
Test Frequency 900MHz
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 12V
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA 8V
Gain 19dB
Max Breakdown Voltage 12V
Emitter Base Voltage (VEBO) 2V
Collector-Base Capacitance-Max 0.45pF
Radiation Hardening No
RoHS Status ROHS3 Compliant
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