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BFR183WH6327XTSA1 Tech Specifications

Trans GP BJT NPN 12V 0.065A 3-Pin SOT-323 T/R

Product Attribute Attribute Value
Category Discrete Semiconductors / RF BJT Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case SC-70, SOT-323
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Part Status Obsolete
Number of Terminations 3
Max Power Dissipation 450mW
Terminal Form GULL WING
Base Part Number BFR183
Configuration SINGLE
Transistor Application AMPLIFIER
Transistor Type NPN
Max Collector Current 65mA
Collector Emitter Breakdown Voltage 12V
Current - Collector (Ic) (Max) 65mA
Collector Base Voltage (VCBO) 20V
Collector-Base Capacitance-Max 0.7pF
Radiation Hardening No
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature 150°C TJ
Published 2007
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position DUAL
Frequency 8GHz
Number of Elements 1
Power Dissipation 450mW
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 12V
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 15mA 8V
Gain 18.5dB
Transition Frequency 8000MHz
Emitter Base Voltage (VEBO) 2V
Noise Figure (dB Typ @ f) 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
RoHS Status RoHS Compliant
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