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BG3130RH6327XTSA1 Tech Specifications

MOSFET N-CH DUAL 8V 25MA SOT363

Product Attribute Attribute Value
Category Discrete Semiconductors / RF MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Surface Mount
Number of Pins 6
Published 2002
Part Status Obsolete
Number of Terminations 6
Max Operating Temperature 150°C
Voltage - Rated 8V
Max Power Dissipation 200mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 800MHz
Base Part Number BG3130
Operating Mode DUAL GATE, DEPLETION MODE
Transistor Application AMPLIFIER
Transistor Type 2 N-Channel (Dual)
Gate to Source Voltage (Vgs) 6V
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 5V
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Package / Case 6-VSSOP, SC-88, SOT-363
Packaging Tape & Reel (TR)
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Min Operating Temperature -55°C
Additional Feature LOW NOISE
Terminal Form GULL WING
Current Rating 25mA
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Current - Test 14mA
Halogen Free Halogen Free
Continuous Drain Current (ID) 25mA
Gain 24dB
Noise Figure 1.3dB
RoHS Status RoHS Compliant
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BG3130RH6327XTSA1 Documents

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