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BSB028N06NN3GXUMA1 Tech Specifications

MOSFET N-CH 60V 22A WDSON-2

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 26 Weeks
Package / Case 3-WDSON
Number of Pins 7
Operating Temperature -40°C~150°C TJ
Published 2012
JESD-609 Code e4
Part Status Active
Number of Terminations 3
Terminal Finish Silver/Nickel (Ag/Ni)
Technology MOSFET (Metal Oxide)
Terminal Form NO LEAD
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-MBCC-N3
Number of Elements 1
Power Dissipation-Max 2.2W Ta 78W Tc
Power Dissipation 78W
Turn On Delay Time 21 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 102μA
Input Capacitance (Ciss) (Max) @ Vds 12000pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 143nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 6 ns
Continuous Drain Current (ID) 90A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0028Ohm
Pulsed Drain Current-Max (IDM) 360A
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.8m Ω @ 30A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 22A Ta 90A Tc
Rise Time 9ns
Vgs (Max) ±20V
Turn-Off Delay Time 38 ns
Threshold Voltage 3V
Drain Current-Max (Abs) (ID) 22A
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 590 mJ
RoHS Status ROHS3 Compliant
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