BSB165N15NZ3GXUMA1 Tech Specifications

Trans MOSFET N-CH 150V 9A 7-Pin WDSON T/R

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 26 Weeks
Mounting Type Surface Mount
Number of Pins 7
Operating Temperature -40°C~150°C TJ
Published 2011
JESD-609 Code e4
Part Status Active
Number of Terminations 3
Terminal Finish Silver/Nickel (Ag/Ni)
Technology MOSFET (Metal Oxide)
Terminal Form NO LEAD
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-MBCC-N3
Number of Elements 1
Power Dissipation-Max 2.8W Ta 78W Tc
Power Dissipation 2.8W
Turn On Delay Time 10 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 110μA
Current - Continuous Drain (Id) @ 25°C 9A Ta 45A Tc
Drain to Source Voltage (Vdss) 150V
Vgs (Max) ±20V
Turn-Off Delay Time 17 ns
Threshold Voltage 3V
Drain Current-Max (Abs) (ID) 9A
REACH SVHC No SVHC
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 3-WDSON
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 16.5m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 75V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 8V 10V
Fall Time (Typ) 7 ns
Continuous Drain Current (ID) 9A
Gate to Source Voltage (Vgs) 20V
Avalanche Energy Rating (Eas) 440 mJ
RoHS Status ROHS3 Compliant
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