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BSC014N03LSGATMA1 Tech Specifications

Trans MOSFET N-CH 30V 34A 8-Pin TDSON

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 3 Weeks
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2006
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 5
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Reach Compliance Code not_compliant
Pin Count 8
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.4m Ω @ 30A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 34A Ta 100A Tc
Rise Time 8.6ns
Vgs (Max) ±20V
Continuous Drain Current (ID) 34A
Max Dual Supply Voltage 30V
Pulsed Drain Current-Max (IDM) 400A
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-PowerTDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Power Dissipation-Max 2.5W Ta 139W Tc
Power Dissipation 139W
Turn On Delay Time 13 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 10000pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 131nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Turn-Off Delay Time 51 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0021Ohm
Avalanche Energy Rating (Eas) 290 mJ
Lead Free Contains Lead
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