BSC027N04LSGATMA1 Tech Specifications

BSC027N04LSGATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 26 Weeks
Mount Surface Mount
Package / Case 8-PowerTDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Reach Compliance Code not_compliant
Pin Count 8
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 49μA
Input Capacitance (Ciss) (Max) @ Vds 6800pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 24A
REACH SVHC No SVHC
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2009
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Power Dissipation-Max 2.5W Ta 83W Tc
Power Dissipation 83W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.7m Ω @ 50A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 24A Ta 100A Tc
Rise Time 5.6ns
Vgs (Max) ±20V
Threshold Voltage 2V
Max Dual Supply Voltage 40V
Pulsed Drain Current-Max (IDM) 400A
RoHS Status ROHS3 Compliant
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