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BSC0502NSIATMA1 Tech Specifications

MOSFET N-CH 30V 26A TDSON-8

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 26 Weeks
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Reach Compliance Code not_compliant
JESD-30 Code R-PDSO-F5
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.3m Ω @ 30A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 26A Ta 100A Tc
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Continuous Drain Current (ID) 100A
Drain Current-Max (Abs) (ID) 26A
Avalanche Energy Rating (Eas) 14 mJ
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-PowerTDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 2.5W Ta 43W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Vgs (Max) ±20V
Max Dual Supply Voltage 30V
Pulsed Drain Current-Max (IDM) 400A
RoHS Status ROHS3 Compliant
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BSC0502NSIATMA1 Documents

Download datasheets and manufacturer documentation for BSC0502NSIATMA1

  • Datasheets

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