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BSC094N06LS5ATMA1 Tech Specifications

BSC094N06LS5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 26 Weeks
Package / Case 8-PowerTDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Part Status Active
Number of Terminations 5
Terminal Finish Tin (Sn)
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9.4m Ω @ 24A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 9.4nC @ 4.5V
Vgs (Max) ±20V
Continuous Drain Current (ID) 11A
Drain-source On Resistance-Max 0.0094Ohm
Max Junction Temperature (Tj) 150°C
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Published 2013
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Reach Compliance Code not_compliant
JESD-30 Code R-PDSO-F5
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 36W Tc
Power Dissipation 2.1W
Turn On Delay Time 4 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.3V @ 14μA
Current - Continuous Drain (Id) @ 25°C 47A Tc
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Turn-Off Delay Time 14 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Height 1.1mm
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BSC094N06LS5ATMA1 Documents

Download datasheets and manufacturer documentation for BSC094N06LS5ATMA1

  • Datasheets

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