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BSC155N06NDATMA1 Tech Specifications

TRENCH 40

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 26 Weeks
Package / Case 8-PowerVDFN
Transistor Element Material SILICON
Series OptiMOS™-T2
Part Status Active
Number of Terminations 6
Terminal Form FLAT
Reach Compliance Code not_compliant
JESD-30 Code R-PDSO-F6
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Case Connection DRAIN
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 15.5m Ω @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2250pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Drain Current-Max (Abs) (ID) 20A
Pulsed Drain Current-Max (IDM) 80A
Avalanche Energy Rating (Eas) 40 mJ
FET Feature Standard
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~175°C TJ
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power - Max 50W Tc
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 20μA
Current - Continuous Drain (Id) @ 25°C 20A Tc
Drain to Source Voltage (Vdss) 60V
Drain-source On Resistance-Max 0.0155Ohm
DS Breakdown Voltage-Min 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status ROHS3 Compliant
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