BSC159N10LSFGATMA1 Tech Specifications

Single N-Channel 100 V 15.9 mOhm 26 nC OptiMOS? Power Mosfet - TDSON-8

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 26 Weeks
Package / Case 8-PowerTDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Reach Compliance Code not_compliant
Pin Count 8
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 15.9m Ω @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain Current-Max (Abs) (ID) 9.4A
Pulsed Drain Current-Max (IDM) 252A
Avalanche Energy Rating (Eas) 155 mJ
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Published 2011
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 5
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Powers
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Power Dissipation-Max 114W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.4V @ 72μA
Current - Continuous Drain (Id) @ 25°C 9.4A Ta 63A Tc
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.0159Ohm
DS Breakdown Voltage-Min 100V
RoHS Status ROHS3 Compliant
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