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BSD235CH6327XTSA1 Tech Specifications

MOSFET N/P-CH 20V SOT363

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2012
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Terminal Finish Tin (Sn)
HTS Code 8541.21.00.95
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Base Part Number BSD235
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs 350m Ω @ 950mA, 4.5V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 950mA 530mA
Drain to Source Voltage (Vdss) 20V
Continuous Drain Current (ID) 530mA
Max Dual Supply Voltage -20V
Drain-source On Resistance-Max 0.35Ohm
FET Feature Logic Level Gate
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Max Power Dissipation 500mW
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
FET Type N and P-Channel
Vgs(th) (Max) @ Id 1.2V @ 1.6μA
Input Capacitance (Ciss) (Max) @ Vds 47pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 0.34nC @ 4.5V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 0.95A
FET Technology METAL-OXIDE SEMICONDUCTOR
REACH SVHC No SVHC
Lead Free Lead Free
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BSD235CH6327XTSA1 Documents

Download datasheets and manufacturer documentation for BSD235CH6327XTSA1

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