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BSD840N L6327 Tech Specifications

MOSFET 2N-CH 20V 0.88A SOT363

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Published 2011
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Terminal Form GULL WING
Reach Compliance Code compliant
Base Part Number BSD840
JESD-30 Code R-PDSO-G6
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type 2 N-Channel (Dual)
Vgs(th) (Max) @ Id 750mV @ 1.6μA
Current - Continuous Drain (Id) @ 25°C 880mA
Drain to Source Voltage (Vdss) 20V
Drain-source On Resistance-Max 0.4Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case 6-VSSOP, SC-88, SOT-363
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Part Status Obsolete
Number of Terminations 6
Terminal Finish MATTE TIN
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 6
Qualification Status Not Qualified
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Power - Max 500mW
Rds On (Max) @ Id, Vgs 400m Ω @ 880mA, 2.5V
Input Capacitance (Ciss) (Max) @ Vds 78pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 0.26nC @ 2.5V
Drain Current-Max (Abs) (ID) 0.88A
DS Breakdown Voltage-Min 20V
Power Dissipation-Max (Abs) 0.5W
RoHS Status RoHS Compliant
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BSD840N L6327 Documents

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