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BSF030NE2LQXUMA1 Tech Specifications

Trans MOSFET N-CH 25V 24A 2-Pin WDSON

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 26 Weeks
Mount Surface Mount
Package / Case 3-WDSON
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Pin Count 2
Number of Elements 1
Power Dissipation-Max 2.2W Ta 28W Tc
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 12V
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Drain to Source Voltage (Vdss) 25V
Vgs (Max) ±20V
Turn-Off Delay Time 18 ns
Threshold Voltage 2V
Drain Current-Max (Abs) (ID) 75A
Pulsed Drain Current-Max (IDM) 300A
Avalanche Energy Rating (Eas) 50 mJ
REACH SVHC No SVHC
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Silver
Mounting Type Surface Mount
Number of Pins 6
Operating Temperature -40°C~150°C TJ
Published 2001
JESD-609 Code e4
Part Status Active
Number of Terminations 2
HTS Code 8541.29.00.95
Terminal Position BOTTOM
JESD-30 Code R-MBCC-N2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 2.8 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 24A Ta 75A Tc
Rise Time 3.4ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 2.6 ns
Continuous Drain Current (ID) 24A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0041Ohm
DS Breakdown Voltage-Min 25V
Radiation Hardening No
RoHS Status ROHS3 Compliant
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BSF030NE2LQXUMA1 Documents

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