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BSL202SNH6327XTSA1 Tech Specifications

MOSFET N-CH 20V 7.5A 6TSOP

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2013
Part Status Active
Number of Terminations 6
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 8.26 ns
Rds On (Max) @ Id, Vgs 22m Ω @ 7.5A, 4.5V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 7.5A Ta
Rise Time 27.5ns
Vgs (Max) ±12V
Continuous Drain Current (ID) 7.5A
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.022Ohm
Pulsed Drain Current-Max (IDM) 30A
Height 1.1mm
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2W Ta
Power Dissipation 2W
FET Type N-Channel
Vgs(th) (Max) @ Id 1.2V @ 30μA
Input Capacitance (Ciss) (Max) @ Vds 1147pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 8.7nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Turn-Off Delay Time 18.9 ns
Threshold Voltage 950mV
Max Dual Supply Voltage 20V
Drain to Source Breakdown Voltage 20V
Avalanche Energy Rating (Eas) 30 mJ
RoHS Status ROHS3 Compliant
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