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BSL307SPH6327XTSA1 Tech Specifications

MOSFET P-CH 30V 5.5A 6TSOP

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mount Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Part Status Active
Number of Terminations 6
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reference Standard AEC-Q101
Power Dissipation-Max 2W Ta
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Rds On (Max) @ Id, Vgs 43m Ω @ 5.5A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 5.5A Ta
Rise Time 8.4ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 29 ns
Continuous Drain Current (ID) 5.5A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.043Ohm
Avalanche Energy Rating (Eas) 44 mJ
Length 2.9mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2001
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC -30V
Terminal Position DUAL
Current Rating -5.5A
Number of Elements 1
Element Configuration Single
Turn On Delay Time 7.3 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 40μA
Input Capacitance (Ciss) (Max) @ Vds 805pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Turn-Off Delay Time 36.4 ns
Threshold Voltage -1.5V
Max Dual Supply Voltage -30V
Pulsed Drain Current-Max (IDM) 22A
Height 1mm
Width 1.6mm
REACH SVHC No SVHC
Lead Free Lead Free
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BSL307SPH6327XTSA1 Documents

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