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BSM75GB170DN2HOSA1 Tech Specifications

IGBT 1700V 110A 625W MODULE

Product Attribute Attribute Value
Category Discrete Semiconductors / IGBTs Modules
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Chassis Mount, Screw
Package / Case Module
Transistor Element Material SILICON
Published 1999
Part Status Obsolete
Number of Terminations 7
Max Power Dissipation 625W
Terminal Form UNSPECIFIED
JESD-30 Code R-XUFM-X7
Configuration Half Bridge
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.9V
Collector Emitter Breakdown Voltage 1.7kV
Input Capacitance 11nF
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 75A
NTC Thermistor No
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Chassis Mount
Number of Pins 34
Operating Temperature 150°C TJ
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position UPPER
Pin Count 7
Number of Elements 2
Element Configuration Dual
Power - Max 625W
Halogen Free Not Halogen Free
Input Standard
Max Collector Current 110A
Voltage - Collector Emitter Breakdown (Max) 1700V
Turn On Time 550 ns
Turn Off Time-Nom (toff) 740 ns
Input Capacitance (Cies) @ Vce 11nF @ 25V
Lead Free Lead Free
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