BSO203PHXUMA1 Tech Specifications

Trans MOSFET P-CH 20V 7A 8-Pin DSO Dry

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Max Power Dissipation 1.6W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 8
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type 2 P-Channel (Dual)
Vgs(th) (Max) @ Id 1.2V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3750pF @ 15V
Rise Time 55ns
Fall Time (Typ) 74 ns
Continuous Drain Current (ID) 7A
Max Dual Supply Voltage -20V
Avalanche Energy Rating (Eas) 97 mJ
FET Feature Logic Level Gate
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2010
JESD-609 Code e3
Part Status Active
Number of Terminations 8
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Turn On Delay Time 16 ns
Rds On (Max) @ Id, Vgs 21m Ω @ 8.2A, 4.5V
Halogen Free Halogen Free
Gate Charge (Qg) (Max) @ Vgs 39nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Turn-Off Delay Time 45 ns
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.021Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status ROHS3 Compliant
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