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BSO220N03MDGXUMA1 Tech Specifications

Trans MOSFET N-CH 30V 6A 8-Pin DSO

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 8
Number of Elements 2
Power Dissipation 1.4W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Drain to Source Voltage (Vdss) 30V
Gate to Source Voltage (Vgs) 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2009
JESD-609 Code e3
Part Status Active
Number of Terminations 8
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Operating Mode ENHANCEMENT MODE
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 22m Ω @ 7.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 15V
Rise Time 2.8ns
Continuous Drain Current (ID) 6A
DS Breakdown Voltage-Min 30V
FET Feature Logic Level Gate
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