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BSO615NGHUMA1 Tech Specifications

Trans MOSFET N-CH 60V 2.6A Automotive 8-Pin SO

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 26 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series SIPMOS®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Voltage - Rated DC 60V
Current Rating 2.6A
Pin Count 8
Operating Mode ENHANCEMENT MODE
FET Type 2 N-Channel (Dual)
Vgs(th) (Max) @ Id 2V @ 20μA
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 25V
Rise Time 15ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.15Ohm
Avalanche Energy Rating (Eas) 60 mJ
FET Feature Logic Level Gate
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2005
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 8
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Terminal Form GULL WING
Base Part Number BSO615
Number of Elements 2
Power Dissipation 2W
Rds On (Max) @ Id, Vgs 150m Ω @ 2.6A, 4.5V
Halogen Free Not Halogen Free
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Continuous Drain Current (ID) 2.6A
Max Dual Supply Voltage 60V
Pulsed Drain Current-Max (IDM) 10.4A
FET Technology METAL-OXIDE SEMICONDUCTOR
Radiation Hardening No
Lead Free Lead Free
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BSO615NGHUMA1 Documents

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