BSP170PL6327HTSA1 Tech Specifications

Trans MOSFET P-CH 60V 1.9A Automotive 4-Pin(3+Tab) SOT-223 T/R

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-261-4, TO-261AA
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series SIPMOS®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Terminal Position DUAL
Pin Count 4
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 300m Ω @ 1.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds 410pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 60 ns
Continuous Drain Current (ID) 1.9A
Drain-source On Resistance-Max 0.3Ohm
DS Breakdown Voltage-Min 60V
Radiation Hardening No
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 4
Operating Temperature -55°C~150°C TJ
Published 2007
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 4
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 1.8W Ta
Power Dissipation 1.8W
Turn On Delay Time 14 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 1.9A Ta
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±20V
Turn-Off Delay Time 92 ns
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 7.6A
Avalanche Energy Rating (Eas) 70 mJ
RoHS Status RoHS Compliant
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