BSP171PH6327XTSA1 Tech Specifications

BSP171PH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mount Surface Mount
Package / Case TO-261-4, TO-261AA
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Series SIPMOS®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 1.8W Ta
Current 19A
Power Dissipation 1.8W
Turn On Delay Time 6 ns
Rds On (Max) @ Id, Vgs 300m Ω @ 1.9A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 1.9A Ta
Rise Time 25ns
Vgs (Max) ±20V
Turn-Off Delay Time 208 ns
Threshold Voltage 1.5V
Max Dual Supply Voltage -60V
Drain to Source Breakdown Voltage 60V
Nominal Vgs 1.5 V
Height 1.6mm
Width 6.7mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 4
Operating Temperature -55°C~150°C TJ
Published 2005
JESD-609 Code e3
Part Status Active
Number of Terminations 4
ECCN Code EAR99
Subcategory Other Transistors
Terminal Position DUAL
Pin Count 4
Voltage 60V
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Vgs(th) (Max) @ Id 2V @ 460μA
Input Capacitance (Ciss) (Max) @ Vds 460pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 87 ns
Continuous Drain Current (ID) 1.45A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.3Ohm
Dual Supply Voltage -60V
Feedback Cap-Max (Crss) 55 pF
Length 6.5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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