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BSP295H6327XTSA1 Tech Specifications

BSP295H6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mount Surface Mount
Package / Case TO-261-4, TO-261AA
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Series SIPMOS®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 40
JESD-30 Code R-PDSO-G4
Power Dissipation-Max 1.8W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 1.8V @ 400μA
Input Capacitance (Ciss) (Max) @ Vds 368pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 19 ns
Continuous Drain Current (ID) 1.8A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.5Ohm
Pulsed Drain Current-Max (IDM) 7.2A
Nominal Vgs 1.1 V
Length 6.5mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2001
JESD-609 Code e3
Part Status Active
Number of Terminations 4
ECCN Code EAR99
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 1.5W
Turn On Delay Time 5.4 ns
Rds On (Max) @ Id, Vgs 300m Ω @ 1.8A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 1.8A Ta
Rise Time 9.9ns
Vgs (Max) ±20V
Turn-Off Delay Time 27 ns
Threshold Voltage 1.1V
Max Dual Supply Voltage 60V
Drain to Source Breakdown Voltage 60V
Dual Supply Voltage 60V
Height 1.6mm
Width 3.5mm
RoHS Status ROHS3 Compliant
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BSP295H6327XTSA1 Documents

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