BSP300H6327XUSA1 Tech Specifications

Trans MOSFET N-CH 800V 0.19A Automotive 4-Pin(3+Tab) SOT-223 T/R

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Number of Pins 4
Operating Temperature -55°C~150°C TJ
Published 2008
JESD-609 Code e3
Part Status Last Time Buy
Number of Terminations 4
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 1.8W Ta
Current 2A
Power Dissipation 1.8W
Turn On Delay Time 7 ns
Rds On (Max) @ Id, Vgs 20 Ω @ 190mA, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 190mA Ta
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 21 ns
Continuous Drain Current (ID) 190mA
Max Dual Supply Voltage 800V
Avalanche Energy Rating (Eas) 36 mJ
Length 6.5mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-261-4, TO-261AA
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Series SIPMOS®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 4
Voltage 800V
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 230pF @ 25V
Rise Time 16ns
Vgs (Max) ±20V
Turn-Off Delay Time 27 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 800V
Height 1.6mm
Width 3.5mm
Lead Free Lead Free
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