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BSP318SL6327HTSA1 Tech Specifications

Trans MOSFET N-CH 60V 2.6A Automotive 4-Pin(3+Tab) SOT-223 T/R

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-261-4, TO-261AA
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series SIPMOS®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Terminal Position DUAL
Number of Elements 1
Power Dissipation-Max 1.8W Ta
Power Dissipation 1.8W
Turn On Delay Time 12 ns
Rds On (Max) @ Id, Vgs 90m Ω @ 2.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±20V
Turn-Off Delay Time 20 ns
Gate to Source Voltage (Vgs) 20V
Avalanche Energy Rating (Eas) 60 mJ
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 4
Operating Temperature -55°C~150°C TJ
Published 1999
Part Status Obsolete
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 2V @ 20μA
Current - Continuous Drain (Id) @ 25°C 2.6A Ta
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 15 ns
Continuous Drain Current (ID) 2.6A
DS Breakdown Voltage-Min 60V
Radiation Hardening No
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