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BSP50E6327HTSA1 Tech Specifications

BSP50E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature 150°C TJ
Published 2011
Part Status Obsolete
Number of Terminations 4
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PDSO-G4
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Power - Max 1.5W
Polarity/Channel Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 500mA 10V
Vce Saturation (Max) @ Ib, Ic 1.8V @ 1mA, 1A
Current - Collector (Ic) (Max) 1A
Frequency - Transition 200MHz
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case TO-261-4, TO-261AA
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Form GULL WING
Reach Compliance Code compliant
Base Part Number BSP50
Reference Standard AEC-Q101
Number of Elements 1
Case Connection COLLECTOR
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Current - Collector Cutoff (Max) 10μA
Voltage - Collector Emitter Breakdown (Max) 45V
Transition Frequency 200MHz
RoHS Status RoHS Compliant
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BSP50E6327HTSA1 Documents

Download datasheets and manufacturer documentation for BSP50E6327HTSA1

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