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BSP603S2LHUMA1 Tech Specifications

Trans MOSFET N-CH 55V 5.2A Automotive 4-Pin(3+Tab) SOT-223

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 4
Operating Temperature -55°C~150°C TJ
Published 2008
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 4
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 4
Power Dissipation-Max 1.8W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 2V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 1390pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 16 ns
Continuous Drain Current (ID) 5.2A
Max Dual Supply Voltage 55V
Height 1.6mm
Width 3.5mm
RoHS Status Non-RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-261-4, TO-261AA
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC 55V
Terminal Position DUAL
Current Rating 5.2A
Number of Elements 1
Element Configuration Single
Power Dissipation 1.8W
Turn On Delay Time 10.8 ns
Rds On (Max) @ Id, Vgs 33m Ω @ 2.6A, 10V
Halogen Free Not Halogen Free
Current - Continuous Drain (Id) @ 25°C 5.2A Ta
Rise Time 16ns
Vgs (Max) ±20V
Turn-Off Delay Time 28 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Length 6.5mm
Radiation Hardening No
Lead Free Contains Lead
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