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BSP88H6327XTSA1 Tech Specifications

Trans MOSFET N-CH 240V 0.35A T/R

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mount Surface Mount
Package / Case TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4
Operating Temperature -55°C~150°C TJ
Published 2008
Part Status Active
Max Operating Temperature 150°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation 1.8W
FET Type N-Channel
Vgs(th) (Max) @ Id 1.4V @ 108μA
Input Capacitance (Ciss) (Max) @ Vds 95pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 10V
Drain to Source Voltage (Vdss) 240V
Vgs (Max) ±20V
Turn-Off Delay Time 17.9 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 240V
Drain to Source Resistance 6Ohm
Height 1.6mm
Width 3.5mm
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 4
Weight 250.212891mg
Packaging Tape & Reel (TR)
Series SIPMOS®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Min Operating Temperature -55°C
Number of Elements 1
Power Dissipation-Max 1.8W Ta
Turn On Delay Time 3.6 ns
Rds On (Max) @ Id, Vgs 6Ohm @ 350mA, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 350mA Ta
Rise Time 3.5ns
Drive Voltage (Max Rds On,Min Rds On) 2.8V 10V
Fall Time (Typ) 18.9 ns
Continuous Drain Current (ID) 350mA
Max Dual Supply Voltage 240V
Input Capacitance 76pF
Rds On Max 600 mΩ
Length 6.5mm
RoHS Status ROHS3 Compliant
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