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BSP92PH6327XTSA1 Tech Specifications

Trans MOSFET P-CH 250V 0.26A 4-Pin(3+Tab) SOT-223 T/R

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mount Surface Mount
Package / Case TO-261-4, TO-261AA
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series SIPMOS®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Power Dissipation 1.8W
Turn On Delay Time 5 ns
Rds On (Max) @ Id, Vgs 12 Ω @ 260mA, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 260mA Ta
Rise Time 6ns
Drive Voltage (Max Rds On,Min Rds On) 2.8V 10V
Fall Time (Typ) 33 ns
Continuous Drain Current (ID) 260mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.26A
Height 1.5mm
Width 3.5mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 4
Operating Temperature -55°C~150°C TJ
Published 2002
JESD-609 Code e3
Part Status Active
Number of Terminations 4
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 4
Power Dissipation-Max 1.8W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Vgs(th) (Max) @ Id 2V @ 130μA
Input Capacitance (Ciss) (Max) @ Vds 104pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 5.4nC @ 10V
Drain to Source Voltage (Vdss) 250V
Vgs (Max) ±20V
Turn-Off Delay Time 67 ns
Threshold Voltage -1.5V
Max Dual Supply Voltage -250V
Drain to Source Breakdown Voltage -250V
Length 6.5mm
REACH SVHC No SVHC
Lead Free Lead Free
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